| abstract |
A semiconductor device includes: a first oxide insulating layer on a first insulating layer; an oxide semiconductor layer on the first oxide insulating layer; a source electrode layer and a drain electrode layer on the oxide semiconductor layer; a source electrode The second insulating layer on the electrode layer and the drain electrode layer; the second oxide insulating layer on the oxide semiconductor layer; the gate insulating layer on the second oxide insulating layer; the gate electrode layer on the gate insulating layer ; And a third insulating layer on the second insulating layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer, and the second insulating layer is in contact with the second oxide insulating layer at a side portion of the second insulating layer The gate electrode layer includes a first region and a second region having mutually different widths, and the first region has a larger width than the second region. |