| abstract |
A semiconductor device may include at least one double-blocking resonant tunneling diode (DBRTD). The at least one double-barrier resonant tunneling diode may include a first doped semiconductor layer and a first barrier layer disposed on the first doped semiconductor layer and including a superlattice. The superlattice may include a plurality of stacked layer groups, each layer group including a plurality of stacked base semiconductor single layers, which defines a base semiconductor portion and is bound to one of adjacent base semiconductor portions At least one non-semiconductor monolayer in the crystal lattice. The at least one double-barrier resonant tunneling diode may further include an intrinsic semiconductor layer disposed on the first barrier layer, a second barrier layer disposed on the intrinsic semiconductor layer, and the first barrier layer. A second doped semiconductor layer on the two superlattice layers. |