| abstract |
A method is provided, including the following operations: performing a deposition process on a substrate, the deposition process is used to deposit a copper layer on a feature portion of the substrate, and the copper layer is doped with an atomic percentage of less than about 30% Zinc; and tempering the substrate after depositing the copper layer, wherein the tempering step is used to migrate zinc to an interface between the copper layer and an oxide layer of the substrate, and the migration of zinc is in The interface creates an adhesive barrier layer to inhibit the electromigration of the copper layer. |