| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2baf849d216e689ecc40ccc931a7a7bc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-3162
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-3424
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-228 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G12-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G61-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D165-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-162
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L61-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G10-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K5-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G61-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G12-08 |
| filingDate |
2018-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31c3da48141cf33839cfbc6b5598dbc1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0207ac1bc5b6dff996919c7180c91bf6 |
| publicationDate |
2019-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201920344-A |
| titleOfInvention |
Flattening agent improved underlayer film forming composition |
| abstract |
The present invention provides a method comprising the step of coating on a semiconductor substrate including a portion with a step and a portion without a step, and forming a resist underlayer film with the portion having the step The step difference (Iso-dense bias) (inverse step difference) from the resist underlayer film that does not have the step difference is reduced by more than 5 nm. The method of the present invention is a method for reducing the Iso-dense bias of the resist underlayer film by more than 5nm. The method includes the following steps: The resist underlayer film comprising (A) polymer and (D) solvent A step of forming a composition, further adding (C) a fluorine-based surfactant, and applying the composition to which (C) a fluorine-based surfactant is added to a portion containing a step and a step having no step In the step on a part of the semiconductor substrate, the step difference (inverse step difference) of the resist underlayer film of the portion having the step difference and the portion not having the step difference is reduced by more than 5 nm. |
| priorityDate |
2017-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |