| abstract |
A compound for depositing high purity tin oxide is disclosed here. A method for depositing tin oxide films using this compound is also disclosed. Such films exhibit high shape retention, high etch selectivity, and optical transparency. Such compounds have the formula R x -Sn-A 4-x where: A is selected from the group consisting of (Y a R ' z ) and a 3- to 7-membered N-containing heterocyclic group; each R The group is independently selected from the group consisting of alkyl groups or aryl groups having 1 to 10 carbon atoms; each R 'group is independently selected from alkyl groups and amides having 1 to 10 carbon atoms Group consisting of radicals or aryl groups; x is an integer from 0 to 4; a is an integer from 0 to 1; Y is selected from the group consisting of N, O, S and P; and when Y is O, S or When Y is not present, z is 1, and when Y is N or P, z is 2. |