| abstract |
The invention provides a method and a composition for manufacturing a porous low-k dielectric film by chemical vapor deposition. In one aspect, the method includes the steps of: providing a substrate in a reaction chamber; forming a structure comprising at least one structure comprising an alkoxysilicon ring or fluorenylsilicon ring compound with or without A gas reagent containing porogen is introduced into the reaction chamber; in the reaction chamber, energy is applied to the gas reagent to initiate the gas reagent reaction to deposit a preliminary film on the substrate, wherein the preliminary film contains The pore former and the preliminary film are deposited; and removing at least a portion of the pore former included therein from the preliminary film and providing the film with pores and a dielectric constant of 3.2 or less. In some embodiments, the structure-forming precursor further includes a hardening additive. |