Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f1cdac90c4272d2ed510122d7153738 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1045 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7856 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66681 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0852 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7836 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2253 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
filingDate |
2018-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbbb2412d1a321a7dfea6f51f0fde9f0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e01257dd84dd6c781bdc7b08b3e1cc16 |
publicationDate |
2019-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-201919243-A |
titleOfInvention |
Semiconductor device and method of manufacturing same |
abstract |
A semiconductor device includes a first doped region of a first conductivity type, a second doped region of a second conductivity type, a source region, a drain region, a gate insulating film, and a gate electrode . The first doped region of the first conductivity type is formed in a substrate region. A second doped region of the second conductivity type is formed in the substrate to be spaced apart from the first doped region of the first conductivity type. The source region is formed in the first doped region of the first conductivity type. The drain region is formed in the second doped region of the second conductivity type. The gate insulating film is formed between the source region and the drain region. A thickness of a first end of the gate insulating film is different from a thickness of a second end of the gate insulating film. The gate electrode is formed on the gate insulating film. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11735520-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11189565-B2 |
priorityDate |
2017-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |