| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31056
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2018-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eefd44a534fa79cddaedcc7a5b13146d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c55770012ae87fa2fbb59b656873cb2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_506ae1e11643abad53e19e679336d276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c07d9947b60ca642c4ad6539eb479331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0602e979355088d6700625bb83364d55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_edf5c0b3853bea2f3055daa99c21c26a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e43621819ee4b681536a620e2f9c8cdb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f247872e745d4f8cff9d04e0744d2fd3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_930507c60c95c406eeb67f82522fa355 |
| publicationDate |
2019-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201919128-A |
| titleOfInvention |
Semiconductor device manufacturing method |
| abstract |
A method of fabricating a semiconductor device includes forming a hard mask layer on a substrate. A multilayer photoresist is formed on the hard mask layer. The multilayer photoresist is etched to form a plurality of openings in the multilayer photoresist to expose a portion of the hard mask layer. The ions are provided directionalally to the multilayer photoresist such that the ions primarily contact the open sidewalls of the multilayer photoresist rather than the hard mask layer. In one embodiment, the multilayer photoresist is directionally etched by angle-directed etch ions, and the etch ions primarily contact the open sidewalls of the multilayer photoresist instead of the hard mask layer. In another embodiment, the multi-layer photoresist can be directionally implanted by angle-directed implant ions, and the implant ions primarily contact the open sidewalls of the multilayer photoresist instead of the hard mask layer. |
| priorityDate |
2017-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |