http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201917233-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
| filingDate | 2018-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9bc0f3a768cdfe1cc0de412c6d38a37c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6add1f38ffdfa3ae2f65b8f06505df0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4f587d2eb4a0a0f01d89734cc60fe94 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bba69269dff5fba8c8740b6e9649f813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e512f2adb3927d17557cc236d8e30ae8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b59604c4ca62ce28ed37e8fd36f870ed http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37a15fa474642d1059c1d0583a2b5b61 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f17fae322e6b88490d568af63d78db0 |
| publicationDate | 2019-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201917233-A |
| titleOfInvention | Method for manufacturing semiconductor device and method for forming metal oxide film |
| abstract | [Problem] A method for forming a metal oxide film capable of forming a positive metal oxide film under low-temperature conditions and a method for producing a semiconductor device using the same are provided. [Means for Solving] A method of manufacturing a semiconductor device having a metal oxide film, which is performed in a state in which a processed object is housed in a chamber, and includes: a process of supplying a precursor gas containing a metal complex to a chamber Forming a precursor layer from the precursor gas on the object to be processed; engineering the supply of the oxidizing gas to the chamber, the oxidizing gas is a gas containing H 2 O, or the metal complex has a functional group containing a hydrogen atom, and the oxidizing gas is a gas comprising an oxidizing agent which reacts with the functional group to form H 2 O, wherein the precursor layer is oxidized to form a metal oxide layer by the oxidizing gas; and the chamber is supplied with an H 2 O gas removal process comprising an alcohol or an amine, to remove adsorbed on the metal oxide layer 2 O H 2 O is removed from the gas to the H; each precursor gas comprises supplying engineering project and the oxidizing gas supply performed multiple times cycles; at least a portion of the cycle into a plurality of times Contains engineering to supply H 2 O to remove gases. |
| priorityDate | 2017-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 57.