| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bf83328d853bc7476ca10212837b3a01 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2203-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-015
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0735 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00246 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-02 |
| filingDate |
2018-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55683ef4f86b99ae9b6666ace842ae6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50580473f0b1b0df87037efd364441cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0eeebd7386f06557f78cee71b36b94c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddcb6832d2a19b56effb99a1f775c97b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25756044d6fb67a0f7f647049901141e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_762679529bdef4e2b362bdfacb82282f |
| publicationDate |
2019-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201917091-A |
| titleOfInvention |
Single stone integration of MEMS and IC devices |
| abstract |
The present disclosure discloses an integrated monolithic device having a microelectromechanical system (MEMS) and an integrated circuit (IC) and a method of forming the same. The monolithic device includes a substrate on which an IC component and a MEMS are formed over the IC. Above the substrate is formed a dielectric interconnect (BEOL) dielectric in the pad stage. A MEMS is formed over the BEOL dielectric having the IC interconnect pads. The MEMS includes a MEMS stack having an active MEMS layer and patterned top and bottom MEMS electrodes formed on the top and bottom end surfaces of the active MEMS layer. An IC MEMS contact via that forms at least partially through the active MEMS layer is formed. An IC MEMS contact is formed in the IC MEMS contact vias in the active MEMS layer and is configured to be coupled to the IC interconnect pads. |
| priorityDate |
2017-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |