| abstract |
The embodiment of the present invention provides a wet process-based method for forming a self-assembled monolayer on a specific transistor to adjust a threshold voltage of a high-dielectric-constant dielectric-metal gate. In one embodiment, the method includes forming a gate structure on a substrate, and the gate structure includes a gate dielectric layer, a barrier layer formed on the gate dielectric layer, and an oxide layer formed on the barrier layer. The above method also exposes the oxide layer to an aqueous solution to form a self-assembled monolayer on the oxide layer, and the aqueous solution contains a metal oxide in an acid that dissolves the metal. |