| abstract |
An improved metal structure on the backside of a high-temperature-resistant compound semiconductor substrate includes: a front metal layer is formed on an upper surface of a compound semiconductor substrate; at least one substrate through-hole penetrates the compound semiconductor substrate, and the substrate through-hole has an inner surface. A top is a front metal layer; at least one sub-metal layer, at least one back metal layer, and at least one diffusion barrier layer are sequentially formed to cover a lower surface of a compound semiconductor substrate and an inner surface of each substrate through-hole, and seed metal The layer is electrically connected to the front metal layer through the substrate through-hole; and a grain-adhesive metal layer is formed on a lower surface of a diffusion blocking layer outside a vicinity of the substrate through-hole and outside the substrate through-hole. The diffusion barrier layer is used to prevent the back metal layer from diffusing to the die-bonding metal layer. |