| abstract |
The invention provides an aqueous chemical mechanical planarization polishing (CMP polishing) composition, which comprises one or more plural elongated, curved or nodular anionic functional colloidal silica particle dispersions or one or more anionic functional spherical gels Of a dispersion of silica dioxide particles in a state, one or more amine carboxylic acids (preferably acidic amino acids or pyridine acids) having an isoelectric point (PI) below 5, and preferably having C 6 to C 16 One or more ethoxylated anionic surfactants of an alkyl, aryl or alkaryl hydrophobic group, wherein the composition has a pH of 3 to 5. The composition achieves good silicon nitride removal and selective removal of nitride and oxide during polishing. |