| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02123 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2017-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45eef5bcf25f6dbcfd73867d0bb9be00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bdd92dfa67148424977645ce3e595b5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8cc4b00087571ea99cd0aa1101fba45e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb98241d0e37c99868e892ba4b2540c7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3ebec553470c9203d4576258e4a81b5 |
| publicationDate |
2019-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201912841-A |
| titleOfInvention |
Semiconductor device forming method and chemical solution |
| abstract |
The method of an embodiment of the invention includes forming three layers, the three layers including: a bottom layer; an intermediate layer on the bottom layer; and a top layer on the intermediate layer. The top layer includes a photoresist. The method further includes removing the top layer; and removing the intermediate layer with a chemical solution. The chemical solution does not contain potassium hydroxide (KOH) and includes at least one of a quaternary ammonium hydroxide and a quaternary ammonium fluoride. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I803348-B |
| priorityDate |
2017-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |