http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201910762-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d4429f2b831529723027dae8093b0559 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R27-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-04 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2018-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_685a3a1454f1ec87d9a50ec783b53e5e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_261384cfa04d29831c0c3c284ec47d40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6c9cb26e12d737ab21c395f560a07b3 |
| publicationDate | 2019-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201910762-A |
| titleOfInvention | Resistivity measurement method for germanium wafer |
| abstract | The resistivity measurement method of the tantalum wafer of the present invention accurately determines the resistivity of only the dopant. The resistivity measuring method of the tantalum wafer of the present invention includes the following steps: determining the relationship between the oxygen concentration of the tantalum wafer W and the amount of hot applied body; and the object of being placed in the manufacturing object of the vertical wafer boat 1 The wafer W is subjected to a body elimination treatment for removing the hot donor body by heat treatment in the vertical heat treatment furnace 2, and the vertical crystal boat is discharged from the vertical heat treatment furnace at a predetermined speed, and then the crucible is measured. The resistivity and the oxygen concentration of the wafer; determining the carrier concentration of the dopant and the thermal donor based on the measured resistivity of the germanium wafer; and determining the oxygen concentration of the germanium wafer according to the measured relationship Calculating a heat application amount of the germanium wafer; obtaining a doping amount obtained by subtracting the obtained heat donor amount from the obtained carrier concentration; and the obtained doping The dose is converted to resistivity. |
| priorityDate | 2017-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.