| abstract |
The problem to be solved by the present invention is to provide a substrate with a multilayer resist film, which can easily remove the silicon component residues which have been modified by dry etching using a stripping solution, and the stripping solution will not affect the semiconductor. The device substrate and the organic resist underlayer film required in the patterning step cause damage. The stripping solution is, for example, a hydrogen peroxide-containing ammonia solution called SC1 commonly used in semiconductor manufacturing processes. The solution of the present invention is a substrate with a multilayer resist film, which has a substrate and a multilayer resist film. The multilayer resist film is formed on the substrate, and the multilayer resist film depends on the substrate side. The sequence includes: an organic resistive lower film that is hardly soluble in ammonia hydrogen peroxide water, an organic film that is soluble in ammonia hydrogen peroxide water, an intermediate film containing a silicon resist, and an upper resist film. |