| abstract |
The subject of the present invention is to provide a photoresist composition, which is highly sensitive in terms of a positive photoresist composition or a negative photoresist composition, and has a small LWR and CDU, and has excellent resolution. Pattern forming method of photoresist composition. The solution to this problem is a sulfonium salt comprising an anion represented by the following formula (1a) and a phosphonium cation represented by the following formula (1b) or (1c). In the formula, A is an organic group containing a polymerizable group. |