| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31da94917d1067c89f7e22444c88a836 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66553 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2018-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb253ed901d7bcabc7fa8ece2be62756
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddea53ef539e0c60b05b8b8d13a29c0f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2de598ec0e0c5a98a14e060abf80d676
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_303ec81d780fd36b9093197ada811ad7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2de73b783cf293fe7c555a4c3eeb1437 |
| publicationDate |
2019-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201909286-A |
| titleOfInvention |
Method of forming conductive spacers for gate contact points and resulting device |
| abstract |
A method includes forming a first gate structure over a first region of a semiconductor substrate. A first sidewall spacer is formed adjacent to the first gate structure. The first gate structure and the first sidewall spacer are recessed to define a first gate contact cavity. A second sidewall spacer is formed in the first gate contact cavity. A first conductive gate contact point is formed in the first gate contact cavity. The second sidewall spacer is removed to define a first spacer cavity. A conductive material is formed in the first spacer cavity to form a first conductive spacer that contacts the first conductive gate contact point. |
| priorityDate |
2017-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |