abstract |
The present invention aims to improve the reliability of a semiconductor device. A method for manufacturing a semiconductor device according to the present invention includes: (a) preparing a semiconductor wafer having a pad electrode 4, a conductive layer 13 made of copper, a photoresist film PR1, and gold The conductive layer 15 is formed; (b) a protective film 18 made of iodine is formed on the surface of the conductive layer 15; (c) a photoresist film PR1 is removed; Removing the protective film 18; and step (e), bringing a part of the bonding wire into contact with the surface of the conductive layer 15. |