| abstract |
A plasma processing apparatus according to an embodiment includes a chamber body, a stage, a gas supply system, and a plasma generating unit. The chamber body provides its internal space as a chamber. The carrier is arranged in the cavity. A refrigerant flow path is formed on the stage. The gas supply system is configured to supply the chamber with a first gas that causes capillary condensation in the porous membrane, and a second gas for etching the porous membrane. The plasma generating unit is configured to generate a plasma of a gas to be supplied to the chamber. The gas supply system provides a first flow path that connects the source of the second gas to the chamber, a second flow path that connects the source of the first gas to the first flow path, and an exhaust device that connects to the second flow path. 3rd flow path. |