| abstract |
The invention provides a photoresist composition, which has few defects in photolithography using high-energy rays as a light source, and has excellent photolithography performance by controlling acid diffusion, and provides a photoresist pattern forming method using the photoresist composition . A photoresist composition characterized by comprising: (A) an anion and a cation containing a secondary structure represented by the following general formula (A1); and (B) a repeat represented by the following general formula (B1) The polymer compound of the unit. |