| abstract |
The object of the present invention is to provide a gate insulating film with a high carrier resistance, a thin film transistor with good carrier mobility, a polymer compound used for the gate insulating film, or a composition containing the polymer compound . The solution to the aforementioned problem of the present invention is to provide a gate insulating film composed of a polymer compound or a composition containing the polymer compound, the polymer compound including a repetition selected from the formula (2) At least one kind of repeating unit of the group consisting of the unit and the repeating unit represented by formula (3), the repeating unit represented by formula (4) and the repeating unit represented by formula (1) below; the aforementioned polymer compound is the formula The sum of the repeating unit shown in (2) and the repeating unit shown in formula (3) and the molar ratio of the repeating unit shown in formula (4), in the repeating unit shown in formula (2) and formula (3) ) When the total feeding amount (mole amount) of the repeating units shown is 100, the molar ratio is 50/100 to 200/100; the total content of all the repeating units contained in the polymer compound is taken as When 100 mol%, the content of the repeating unit represented by the following formula (1) is 75 mol% or more; the total mass of the aforementioned polymer compound is 80% by mass or more relative to the entire composition, relative The total mass of the compound containing two or more amine groups in the polymer compound is 4.5% by mass or less. |