| abstract |
A method of cutting (eg, singulating) a metal gate structure in a semiconductor device structure is provided. In some examples, the double-layer structure may form a sub-metal gate structure during the replacement gate manufacturing process. In one example, a semiconductor device includes a plurality of metal gate structures disposed on an interlayer dielectric layer on a substrate, and an isolation structure is disposed between the metal gate structures, wherein the interlayer dielectric layer surrounds the periphery of the isolation structure, and the dielectric The electrical structure is disposed between the interlayer dielectric layer and the isolation structure. |