http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201903899-A

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filingDate 2013-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2019-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201903899-A
titleOfInvention Method for patterning a low dielectric constant dielectric film
abstract The present invention relates to a method of patterning a low-k dielectric film. In one example, a method of patterning a low-k dielectric film includes forming and patterning a mask layer on a low-k dielectric layer, the low-k dielectric layer being disposed on a substrate. The method also includes treating the exposed portion of the modified low-k dielectric layer with a nitrogen-free plasma. The method also includes removing the modified portion of the low-k dielectric layer by remote plasma treatment, and removing the modified portion of the low-k dielectric layer relative to the mask layer and the low dielectric constant The unmodified portion of the electrical layer is selective.
priorityDate 2012-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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