http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201901983-A

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filingDate 2018-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d5a957aae1981cf7d955410d1e2d9a8
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publicationDate 2019-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201901983-A
titleOfInvention Manufacture of tunneling junction ultraviolet light emitting diode
abstract A method of fabricating a light emitting diode (LED) includes forming an active region that is structured to emit ultraviolet (UV) light and disposed between a first n-type semiconductor region and a first p-type semiconductor region. The method also includes forming a tunneling junction, wherein the first p-type semiconductor region is disposed between the active region and the tunnel junction, and wherein the tunnel junction is electrically coupled to pass the charge carrier A first p-type semiconductor region is implanted into the active region. A second n-type semiconductor region is also formed, wherein the tunnel junction is disposed between the second n-type semiconductor region and the first p-type semiconductor region.
priorityDate 2017-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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