| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-4757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1259
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-469
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-351 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8258
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2014-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_341eaf85e0ec8395eeafb59e30f7eac1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07bb8392facdaba582b2821adaf4f565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c691e45cec653ccc1c8a4b750ec51dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50d912d77f8bc7ba4bb2eaf6e212d59f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75c6267d8c775da162e94c833c3742ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bcf992f8875b8b2326d01c1c2530de7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce65390412cb56edad4a4f4fe97bcc94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d87656664bfc5947d845a2a56c080b7 |
| publicationDate |
2019-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201901814-A |
| titleOfInvention |
Semiconductor device and method of manufacturing semiconductor device |
| abstract |
In a semiconductor device using an oxide semiconductor, electrical characteristics are improved. An object of one embodiment of the present invention is to provide a semiconductor device with small variations in electrical characteristics and high reliability. One embodiment of the present invention includes: a first insulating film having a hydrogen molecule desorption amount at an arbitrary temperature of 400 ° C. or higher at a temperature of 300 ° C. or less when the thermal desorption spectrum analysis is performed; A first barrier film on the insulating film; a second insulating film on the first barrier film having a region containing oxygen in excess of a stoichiometric composition; and a first transistor including a first oxide semiconductor film on the second insulating film . |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I730513-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11495601-B2 |
| priorityDate |
2013-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |