| abstract |
The present invention discloses a device structure of a field effect transistor and a method of forming a device structure of a field effect transistor. Forming a first dielectric layer and forming a second dielectric layer on the first dielectric layer. An opening extending vertically through the first and second dielectric layers is formed. After forming the first opening, the second dielectric layer is laterally recessed relative to the first dielectric layer by a selective etching process to extend a portion of the opening that extends through the first dielectric layer relatively vertically, and widens A portion of the opening extending vertically through the second dielectric layer. After laterally recessing the second dielectric layer, forming a gate electrode, the gate electrode including a narrow segment in the portion extending perpendicularly through the opening of the first dielectric layer and extending vertically through the A wide segment of the portion of the opening of the second dielectric layer. |