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publicationDate 2018-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201842626-A
titleOfInvention Process integration method for selective tungsten via filling
abstract The present invention generally relates to interconnects disposed on a substrate and methods of forming such interconnects. Through holes and trenches are formed in the stack formed on the substrate. The bottom of the via is pretreated using a first pre-treatment step. The sidewall of the via is pretreated using a second pretreatment step. A first type of first metal fill material of the first type is deposited on the stack and in the via. A second type of second metal fill material is deposited on the stack and in the trench.
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priorityDate 2017-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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