| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5a9791add84989ee56e2233bb12e7bc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B6-502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-24475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B6-504 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14676
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1469
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B6-035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01T1-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01T1-241
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B6-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14634
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-186 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01T1-24 |
| filingDate |
2018-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4a6369609ca22ccff066dab1a3514ea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df89b5db55c77c3b4ead79aead567f35 |
| publicationDate |
2018-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201839424-A |
| titleOfInvention |
Method of manufacturing a semiconductor radiation detector |
| abstract |
The invention discloses a device and a method for manufacturing the device. The method includes obtaining a plurality of semiconductor single crystal blocks. Each of the plurality of semiconductor single crystal blocks may have a first surface and a second surface. The second surface may be opposite to the first surface. The method may further include bonding a plurality of semiconductor single crystal blocks to a first semiconductor wafer through respective first surfaces. The plurality of semiconductor single crystal blocks form a radiation absorbing layer. The method further includes forming a plurality of electrodes on respective second surfaces of each of the plurality of semiconductor single crystal blocks, depositing pillars on each of the plurality of semiconductor single crystal blocks, and depositing the plurality of A semiconductor single crystal block is bonded to a second semiconductor wafer through the pillar. |
| priorityDate |
2017-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |