| abstract |
The present invention provides a method for manufacturing a III-nitride semiconductor substrate, which includes: a substrate preparation step S10, which prepares a sapphire substrate; a heat treatment step S20, which performs a heat treatment on the sapphire substrate; and a flow in advance, step S30, where A metal gas; a buffer layer forming step S40, which forms a buffer layer on a sapphire substrate under growth conditions of a growth temperature: 800 ° C to 950 ° C and a pressure: 30 torr to 200 torr; and a growth step S50, which A group III nitride semiconductor layer is formed on the buffer layer under growth conditions: growth temperature: 800 ° C. to 1025 ° C .; pressure: 30 torr to 200 torr; growth rate: 10 μm / h or more. |