| abstract |
The present invention provides a composition suitable for selective removal from a microelectronic device by etching a ruthenium-germanium-containing material relative to a ruthenium-containing material, the microelectronic device having features on the surface containing such materials, the compositions Containing hydrofluoric acid, acetic acid, hydrogen peroxide, and at least one additional acid that is modified, such as by one or more of etch rate or selectivity, and tunable to achieve the desired Si:Ge removal Selectivity and etch rate performance. |