| abstract |
The present invention provides an IGZO sputtering target that suppresses arcing.n n n The IGZO sputtering target of the present invention contains In, Ga, Zn, and O, and is characterized by an atomic ratio of 0.30 Å In / (In + Ga + Zn) ≦ 0.36, 0.30 ≦ Ga / (In + Ga + Zn) ≦0.36, 0.30≦Zn/(In+Ga+Zn)≦0.36, the relative density is 96% or more, the average grain size of the crystal grains on the surface of the sputtering target is 30.0 μm or less, and the difference in particle diameter of the surface of the sputtering target It is 20% or less (1.0≦Dmax/Dmin≦1.2). |