| abstract |
The present invention is to provide a polymer capable of forming a photoresist pattern excellent in dry etching resistance when used as a main chain-cut type positive photoresist. The polymer of the present invention has a monomer unit (A) represented by the following formula (I) and a monomer unit (B) represented by the following formula (II). In addition, in formula (I), B is a bridged-ring saturated cyclic hydrocarbon group which may also have a substituent, and n is 0 or 1. Furthermore, in formula (II), R 1 is an alkane group, p is an integer of 0 or more and 5 or less. In the case where there are plural R 1 , they may be the same as or different from each other. [Chem 1] |