| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9d527f9a5c3e991a1797de3518a88d14 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-291
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0607
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3171 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K17-693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate |
2017-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e89e4a01d8396b6954d470b12c9c452f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_352fd5ffb16ea688664661fb4f7f9432 |
| publicationDate |
2018-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201834251-A |
| titleOfInvention |
Compound semiconductor device and method of manufacturing same |
| abstract |
The present invention suppresses variations in the threshold voltage V GS ( th ) of the transistor in the compound semiconductor device. The compound semiconductor device (100) includes a first transistor (102) formed on the GaN epitaxial layer (114). The first transistor (102) has a gate electrode (120), a source electrode (122) and a drain electrode (124), and a protective film (130) covering the electrodes. The end of the gate electrode (120) of the first transistor (102) does not overhang into the protective film (130), and in the region where the gate electrode (120) of the first transistor (102) is formed, GaN The concentration of fluorine in the epitaxial layer (114) is substantially zero. |
| priorityDate |
2016-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |