| abstract |
The present invention provides a semiconductor device having good electrical characteristics. The semiconductor device of the present invention includes a first conductor on a substrate, a first insulator on the first conductor, an oxide on the first insulator, a second insulator on the oxide, and a second conductor on the second insulator. The third insulator on the second conductor, the fourth insulator in contact with the side surface of the second insulator, the side of the second conductor, and the side of the third insulator, and the third insulator in contact with the oxide, the first insulator, and the fourth insulator Fifth insulator. The first insulator and the fifth insulator are in contact in a peripheral region on the oxide side. The oxide includes a first region where a channel is formed, a second region adjacent to the first region, a third region adjacent to the second region, and a fourth region adjacent to the third region. The first region has higher resistance than the second region, the third region, and the fourth region, and overlaps the second conductor. The second region has higher resistance than the third region and the fourth region, and overlaps the second conductor. The third region has a higher resistance than the fourth region and overlaps the fourth insulator. |