| abstract |
A silicon carbide substrate and a semiconductor wafer for epitaxy, wherein the silicon carbide substrate has a surface and a plurality of patterned structures formed on the surface, and the crystal plane of the surface is a (0001) plane; the width of the patterned structures It gradually decreases from bottom to top and forms at least one side surface which is inclined, and the crystal plane of the side surface is (-1,0,1,2) plane. A gallium nitride epitaxial layer is disposed on the top of the silicon carbide substrate to constitute the semiconductor wafer. Thereby, a laterally extending differential row defect is formed at the bottom of the gallium nitride epitaxial layer, and it is difficult to form a penetrating differential row defect extending upward, so that the gallium nitride epitaxial layer has good epitaxial quality. |