| abstract |
A method includes: providing a starting structure, the starting structure comprising a semiconductor substrate, a source and a drain, a hard mask liner layer above the source and drain electrodes, and a hard mask liner layer The upper bottom dielectric layer, metal gates between the source and drain, wherein the metal gates are defined by spacers, between corresponding spacers, and Gate cover openings above the metal gates, and top dielectric layers located above the bottom dielectric layer and in the gate cover openings, thereby producing gate covers. The method further includes removing a portion of the top dielectric layer, the removal causing contact openings and pits (s) at the top portions of the spacers and / or gate covers, and terminating the material by etching To fill the pit, the etch stop material has better etch stop capability than the spacer and gate cover materials. The resulting semiconductor structure is also revealed. |