| abstract |
The present invention is directed to a method for producing a thin inorganic film on a substrate, particularly in the field of atomic layer deposition. It relates to a method for preparing a metal film comprising (a) depositing a metal-containing compound from a gaseous state onto a solid substrate and (b) bringing a solid matrix having a deposited metal-containing compound to the formula (Ia), Compound contact of (Ib), (Ic), (Id), (IIa), (IIb), (IIc), or (IId) n n n Wherein A is O or NR N , R and R N are hydrogen, alkyl, alkenyl, aryl or fluorenyl, R 1 , R 2 , R 3 , and R 4 are hydrogen, alkyl, alkenyl, aromatic A group, a thiol group, or an ester group, and the E system is absent, or is an oxygen, methylene, ethylidene, or 1,3-propanyl group. |