| abstract |
Provided is a chemical mechanical polishing pad containing a polishing layer for polishing a semiconductor substrate, the polishing layer including a polyurethane reaction product including a reaction mixture of a curing agent and a polyisocyanate prepolymer, the polyisocyanate prepolymer The unreacted isocyanate (NCO) concentration of the polymer is 8.3wt% to 9.8wt% and consists of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and contains polyethylene glycol or ethylene oxide repeating units The hydrophilic portion of the polyol blend, toluene diisocyanate, and one or more isocyanate extenders are formed, wherein the polyurethane reaction product exhibits a shorter Shore than the dry polyurethane reaction product Wet Shore D hardness with 10% to 20% less D hardness. |