| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate |
2017-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c5781b889dd3e3508c3f78ba007ce5d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9474cc20d5698478d74f3cd06dd3acaf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1fa1c8944ead4b5c138f4ae88411558 |
| publicationDate |
2018-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201828457-A |
| titleOfInvention |
Inverted step contact for improved density of 3D stacked devices |
| abstract |
A semiconductor stacking device comprising a first plurality of device layers separated from each other by a first plurality of dielectric layers, a first conductive via coupled to a contact portion of the device layer of the first plurality of device layers, by a second a second plurality of device layers separated from each other by a plurality of dielectric layers, and a second conductive via coupled to a contact portion of the device layer of the second plurality of device layers. a first conductive via extending to a front surface of the semiconductor stacked device and a second conductive via extending to a back surface of the semiconductor stacked device, the first plurality of device layers forming a step pattern in the first direction, and the second plurality The device layer forms a step pattern in a second direction that is inverted from the first direction. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I735024-B |
| priorityDate |
2016-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |