| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_49f04b1dc6b9fcc2d8b159c5ebee364b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-54426 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67259
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2836
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67282 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-3183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate |
2017-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_386504afc548c5a0956ef4fa9fdc15ff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8118c0d370e74a2ed9d3d5160ecfb17 |
| publicationDate |
2018-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201828383-A |
| titleOfInvention |
Inspection method, inspection device, and mark formation method |
| abstract |
An inspection method of one embodiment is an inspection method for laser marking semiconductor devices D having a substrate SiE and a metal layer ME formed on the substrate SiE, and includes the following steps: by inspecting the semiconductor device D, a semiconductor device is specified Step of the fault site fp in D; based on the fault site fp, a step of irradiating the semiconductor device D from the substrate SiE side with laser light having a wavelength that passes through the substrate SiE in such a manner that a mark is formed at least at the boundary between the substrate SiE and the metal layer ME. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I784720-B |
| priorityDate |
2017-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |