| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B7-0035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B9-08 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2017-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_752c55727a2e62f3983971c32c80b321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb8b4e0ce8a42ee7ee3f3e656650aaae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_296a6f87ecc5b54fa05cffd82b29db48 |
| publicationDate |
2018-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201827649-A |
| titleOfInvention |
Technology to prevent aluminum fluoride from accumulating on heaters |
| abstract |
Embodiments of the present disclosure provide a method of processing a process chamber. In one embodiment, the method includes flowing a purge gas into the substrate at a flow rate of from about 0.14 sccm/mm 2 to about 0.33 sccm/mm 2 and a chamber pressure of from about 1 Torr to about 30 Torr in the absence of the substrate. The process chamber is used to purify the 300 mm substrate processing chamber, and the throttle valve of the vacuum pumping system of the substrate processing chamber is in a fully open position, wherein the purge gas is chemically active to the deposition residue on the exposed surface of the substrate processing chamber . |
| priorityDate |
2016-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |