| abstract |
Provided is a cleaning composition using a non-special device such as a coater, a baking furnace (hardening furnace), and a cleaning chamber installed in a semiconductor manufacturing apparatus, which can suppress the processing of a substrate or an interlayer insulating film, etc. In addition to damage or change in shape of layers other than the layer, the treated layer can be removed well, and a cleaning method using the cleaning composition and a method for manufacturing a semiconductor using the cleaning method can be provided. (2) The cleaning layer formed on the substrate is cleaned using a cleaning composition containing the component (A) that can decompose the processing layer and the film-forming polymer (B). As a to-be-processed layer, a hard mask film is mentioned, for example. Examples of the component (A) include at least one selected from a basic compound (A1) and an acidic compound (A2). |