| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42344
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate |
2017-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a94d1267509427c45ab0ac566a14005b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d1ab15a7b6254af1a8f12f1c6e7985d |
| publicationDate |
2018-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201826500-A |
| titleOfInvention |
Semiconductor device |
| abstract |
The object of the present invention is to prevent the uneven distribution of electrons to the charge accumulation film due to the shape of the fin, thereby preventing the reliability of the semiconductor device from being reduced in the shape of the fin. . The impurity concentration of the portion of the memory gate electrode MG constituting the memory cell formed on the upper portion of the fin FA and the ONO film ON covering the upper surface of the fin FA is set lower than the side of the cover fin FA. The impurity concentration of the portion where the ONO film is connected to the ON. |
| priorityDate |
2016-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |