| abstract |
The present invention provides an etching composition for selectively removing a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition disposed to etch titanium nitride (TiN) comprises 5% by weight to 30% by weight of hydrogen peroxide, 15% by weight to 50% by weight of the acid compound relative to the total weight of the etching composition, and 0.001% by weight to 5% by weight of a corrosion inhibitor, wherein the acid compound comprises at least one of: phosphoric acid (H 3 PO 4 ), nitric acid (HNO 3 ), hydrochloric acid (HCl), hydroiodic acid (HI), hydrogen Bromo acid (HBr), perchloric acid (HClO 4 ), citric acid (H 2 SiO 3 ), boric acid (H 3 BO 3 ), acetic acid (CH 3 COOH), propionic acid (C 2 H 5 COOH), lactic acid ( CH 3 CH(OH)COOH) and glycolic acid (HOCH 2 COOH). |