abstract |
The present invention provides a material for forming a resist underlayer film used in a lithography step having both heat resistance, planarity, and etching resistance. A resist underlayer film-forming composition containing the following formula (1): (In formula (1), R 1 is an organic group containing at least 2 amines and at least 3 aromatic rings having 6 to 40 carbon atoms, and R 2 and R 3 are each a hydrogen atom and an alkyl group having 1 to 10 carbon atoms , An aryl group, a heterocyclic group having 6 to 40 carbon atoms, or a combination thereof, and the alkyl group, the aryl group, and the heterocyclic group may be halo, nitro, amine, formamyl, and alkoxy Group, or a hydroxy group, or R 2 and R 3 may form a ring structured polymer. In the above composition, R 1 is a divalent organic group derived from N, N'-diphenyl-1,4-phenylenediamine. |