| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2dd9870c890413b57d9ac979e0b73322 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78391
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-516
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6684 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43 |
| filingDate |
2017-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1152c3532e7a2569225aede60d6c4caa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e5b04fdf38400d5c1d2e9a4353be181 |
| publicationDate |
2018-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201824563-A |
| titleOfInvention |
Ring gate field effect transistor based on negative capacitance and manufacturing method thereof |
| abstract |
The invention provides a ring-gate field-effect transistor based on negative capacitance and a manufacturing method thereof. A high-K dielectric layer and a metal gate layer of the gate structure of the ring-gate field-effect transistor based on the negative capacitance are formed. Ferroelectric material layer; the ferroelectric material layer has a negative capacitance. This layer of ferroelectric material with negative capacitance is used as a built-in voltage amplifier, which can reduce the sub-critical amplitude of the element to less than 60 mV / decade . In addition, the transistor uses Si nanowires as channel materials, and high-K metal gates completely surround the Si nanowires to obtain better gate control capabilities and avoid short channel effects. The manufacturing method of the ring-gate field-effect transistor based on the negative capacitance of the present invention has a simple manufacturing process and is beneficial to reducing production costs. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022106329-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11302810-B1 |
| priorityDate |
2016-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |