| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_39094f1396998763fb81ce213ed520bd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1087
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823892
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7823
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7817
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0646
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-761
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-36 |
| filingDate |
2016-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25d0926caf20c485c79c40429ae185b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe970a2f3c2f88bd30579bed245c2f0a |
| publicationDate |
2018-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201824546-A |
| titleOfInvention |
Semiconductor device |
| abstract |
An embodiment of the present invention provides a semiconductor device. The semiconductor device includes a substrate structure including a high potential region, a low potential region, a potential conversion region, and an isolation region. The low potential region and the high potential region are separated from each other, and the potential conversion region and the isolation region are disposed in the high potential region. The isolation region separates the potential conversion region and the high potential region from each other with the low potential region. The isolation doped region has a first conductivity type and is located in the isolation region. The isolation doped region includes a first doped portion and a second doped portion. The depth of the first doped portion extends along the isolation region toward the first portion of the potential conversion region. Decreases linearly in one direction. The second doped portion is adjacent to the first doped portion, and the depth of the second doped portion decreases linearly along the second direction of the isolation region toward the high potential region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I703674-B |
| priorityDate |
2016-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |