| abstract |
The embodiment of the present invention relates to a three-dimensional (3D) integrated circuit (IC), which includes a first IC die and a second IC die. The first IC die includes a first semiconductor substrate and a first interconnect structure above the first semiconductor substrate. The second IC die includes a second semiconductor substrate, and a second interconnection structure separating the second semiconductor substrate from the first interconnection structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and surrounds an air reservoir between the first IC die and the second IC die peripherally. The seal ring structure includes a gas discharge opening structure configured to allow gas to pass between the gas reservoir and a surrounding environment surrounding the 3D IC. |