| abstract |
The leakage problem of the sub-fins of the SiGe / Shallow Trench Isolation (STI) interface can be mitigated with ring implants. The annular cloth vegetation is used to form a high resistance layer. For example, the silicon substrate layer (204) is coupled to the SiGe layer, which is coupled to the germanium (Ge) layer. The gate is arranged on the Ge layer. The vegetation is embedded in the Ge layer, which makes the layer more resistive. However, the area is not being implanted because it is being protected (or covered) by the gate, so the area is still less resistive than the remaining Ge layer. In some embodiments, the resistive region of the Ge layer may be etched and / or undercut (etch undercut or EUC) may be implemented to expose the unplanted Ge region of the Ge layer. |